Short Biography

Han Gao received his B.S. degrees in Electronic Science and Technology from University of Electronic Science and Technology of China in 2019, and his Ph.D. in Physical Electronics from Peking University in 2024. During his doctoral studies under the supervision of Professor Hongqi Xu, he focused on the low-temperature quantum transport properties of Ge/SiGe heterostructures. In 2024, he joined the Semiconductor Quantum Computing Group leaded by Professor Hongqi Xu at BAQIS as a postdoctoral researcher. His current research interests include Ge-based hybrid devices and the exploration of their underlying physical phenomena.

Selected Publications/Preprints (equal #, corresponding *)

1. Shili Yan, Yi Luo, Haitian Su, Han Gao, Xingjun Wu, Dong Pan*, Jianhua Zhao, Ji-Yin Wang*, and H. Q. Xu*. Gate Tunable Josephson Diode Effectin Josephson Junctions Made from InAs Nanosheets.  Advanced Functional Materials 35, 2503401 (2025).

2. Haitian Su, Ji-Yin Wang, Han Gao, YiLuo, Shili Yan, Xingjun Wu, Guoan Li, Jie Shen, Li Lu, Dong Pan*, Jianhua Zhao, Po Zhang*, and H. Q. Xu*. Microwave-Assisted UnidirectionalSuperconductivity in Al-InAs Nanowire-Al Junctions under Magnetic Fields. Physical Review Letters 133, 087001 (2024).

3. Yi Luo, Xiao-Fei Liu, Zhi-Hai Liu, Weijie Li, Shili Yan, Han Gao, Haitian Su, Dong Pan*, Jianhua Zhao, Ji-Yin Wang*, and H. Q. Xu*. One-Dimensional Quantum Dot ArrayIntegrated with Charge Sensors in an InAs Nanowire. Nano Letters 24, 14012–14019 (2024).

4. Jie-yin Zhang, Ming Ming, Jian-huan Wang, Ding-ming Huang, Han Gao, Yi-xin Chu, Bin-xiao Fu, H. Q. Xu*, and Jian-jun Zhang*. High-quality Ge/SiGeheterostructure with atomically sharp interface grown by molecular beamepitaxy. Applied Physics Letters 125, 12206 (2024).

5. Han Gao, Zhen-Zhen Kong, Po Zhang, Yi Luo, Haitian Su, Xiao-FeiLiu, Gui-Lei Wang*, Ji-Yin Wang*, and H. Q. Xu*. Gate-Defined Quantum Point Contactsin a Germanium Quantum Well. Nanoscale 16,10333-10339 (2024).